MUNICH & SEOUL, South Korea–(BUSINESS WIRE
)–The Microsoft Technology Center, Munich and
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced availability of an optimized platform utilizing Samsung’s advanced Green Memory in Microsoft’s virtualized data center. A system based on Samsung’s 30 nanometer (nm) class* DDR3 memory and Microsoft’s data center platform proved to deliver significant power savings, as part of an overarching system evaluation study.
The evaluation platform, which is available through the Microsoft Technology Center, can be used immediately. Detailed findings on the evaluation testing are available in a white paper posted on Microsoft’s website:www.microsoft.com/germany/msdn/kontakt/mtc.mspx
and Samsung‘s Green Memory website:www.samsung.com/GreenMemory
Frank Koch, infrastructure architect and Green IT lead of Microsoft Germany summarizes the joint efforts: “The world notices a dramatic increase of energy usage in data centers with more and more people leveraging their IT and moving to a private cloud. With the innovative memory modules from Samsung, we do not only measure higher throughput and performance for our hyper-v cloud solutions but a lower power consumption of the involved server systems, too. This is a great win-win situation for everyone.”
“Our collaborative efforts with Microsoft are focused on expanding solutions with greater energy efficiency and IT investment savings for next-generation and current server systems, thus enabling more sustainable business practices such as ‘creating shared value’ for customers on a grander scale,” said Wanhoon Hong, executive vice president of memory sales & marketing, Device Solutions, Samsung Electronics.
“In the near future, we also plan to develop solutions based on our 20nm-class* 4Gb DDR3 and enterprise SSD to keep providing the greenest memory products with optimal performance, which will significantly expand the rapidly growing green IT memory market.” Hong added.
Today, Samsung’s 30nm-class 2Gb Green DDR3 chips feature the highest DRAM performance level, based on innovative circuit design and advanced processes. For server applications, memory modules can reach up to 1.866 gigabits per second (Gbps) at 1.35 volts, while PC modules can run at up to 2.133Gbps (1.5 volts), which is 3.5 times faster than 60nm-class* DDR2 and 1.6 times faster than 50nm-class* DDR3.
The new evaluation tests combining Samsung’s Green DDR3 and Microsoft’s enterprise system evaluation platform are focused on achieving an optimal match between performance and power efficiency, the two top priorities of data centers.
Samsung’s 30nm-class Green DDR3 was tested in eight gigabyte registered dual inline memory modules, installed on server systems running virtualized environments with the Windows Server 2008 R2 Enterprise operating system. They delivered power conservation levels of up to 15 percent for a 30-watt per system decrease, compared to systems using 50nm-class DDR3.
Microsoft and Samsung plan to expand their collaborative evaluation efforts that optimize 20nm-class and 30nm-class DDR3 memory and enterprise SSDs through system-level tests in virtual environments. The collaboration will include next-generation DRAM and data storage devices that contribute significantly to an IT department’s total cost of ownership.
More at http://www.microsoft.com/mtc/ and www.samsung.com